High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Abstract

Abstract An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐electron‐gas/two‐dimensional‐hole‐gas/two‐dimensional‐electron‐gas (2DHG/2DEG/2DHG/2DEG) are respectively induced due to the polarization charges at the heterojunction interfaces. The 2DHGs and 2DEGs compensate each other, resulting a charge balanced superjunction in the gate‐drain spacing, thus inducing a uniform electric field distribution under off‐state maximizing the breakdown voltage. Additionally, because the current flows through both the 2DEGs, higher output current and lower on‐state resistance are observed in contrast to the conventional Fin‐HEMT. Simulation results show breakdown voltage of 2957 V (VGS = –6 V) and on‐state resistance of 0.31 mΩ·cm2 (VDS = 0.1 V, VGS = 0 V) for the SJFin‐HEMT, comparing with that of 241 V and 0.36 mΩ·cm2 for the conventional Fin‐HEMT.

Keywords

• Power semiconductor devices
• Other field effect devices