Comparison of Sb<sub>2</sub>O<sub>3</sub> and Sb<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Double Stacked pH Sensing Membrane Applied in Electrolyte-Insulator-Semiconductor Structure
Chyuan-Haur Kao,
Kuan-Lin Chen,
Hui-Ru Wu,
Yu-Chin Cheng,
Cheng-Shan Chen,
Shih-Ming Chen,
Ming-Ling Lee,
Hsiang Chen
Affiliations
Chyuan-Haur Kao
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, Taiwan
Kuan-Lin Chen
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, Taiwan
Hui-Ru Wu
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan
Yu-Chin Cheng
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan
Cheng-Shan Chen
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan
Shih-Ming Chen
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan
Ming-Ling Lee
Department of Electro-Optical Engineering, Minghsin University of Science and Technology, No.1, Xinxing Rd., Xinfeng, Hsinchu 304, Taiwan
Hsiang Chen
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan
In this study, electrolyte-insulator-semiconductor (EIS) capacitors with Sb2O3/SiO2 double stacked sensing membranes were fabricated with pH sensing capability. The results indicate that Sb2O3/SiO2 double stacked membranes with appropriate annealing had better material quality and sensing performance than Sb2O3 membranes did. To investigate the influence of double stack and annealing, multiple material characterizations and sensing measurements on membranes including of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were conducted. These analyses indicate that double stack could enhance crystallization and grainization, which reinforced the surface sites on the membrane. Therefore, the sensing capability could be enhanced, Sb2O3/SiO2-based with appropriate annealing show promises for future industrial ion sensing devices.
