APL Materials (Feb 2022)

β-Gallium oxide power electronics

  • Andrew J. Green,
  • James Speck,
  • Grace Xing,
  • Peter Moens,
  • Fredrik Allerstam,
  • Krister Gumaelius,
  • Thomas Neyer,
  • Andrea Arias-Purdue,
  • Vivek Mehrotra,
  • Akito Kuramata,
  • Kohei Sasaki,
  • Shinya Watanabe,
  • Kimiyoshi Koshi,
  • John Blevins,
  • Oliver Bierwagen,
  • Sriram Krishnamoorthy,
  • Kevin Leedy,
  • Aaron R. Arehart,
  • Adam T. Neal,
  • Shin Mou,
  • Steven A. Ringel,
  • Avinash Kumar,
  • Ankit Sharma,
  • Krishnendu Ghosh,
  • Uttam Singisetti,
  • Wenshen Li,
  • Kelson Chabak,
  • Kyle Liddy,
  • Ahmad Islam,
  • Siddharth Rajan,
  • Samuel Graham,
  • Sukwon Choi,
  • Zhe Cheng,
  • Masataka Higashiwaki

DOI
https://doi.org/10.1063/5.0060327
Journal volume & issue
Vol. 10, no. 2
pp. 029201 – 029201-40

Abstract

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Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.