1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate

Tomomasa Watanabe; Mikihiro Yokozeki; Masashi Takanohashi; Michinori Shiomi; Hiroshi Nakajima; Masayuki Tanaka; Daiji Kasahara; Noriko Kobayashi; Noriyuki Futagawa

doi:10.35848/1882-0786/adaa4c

Applied Physics Express (Jan 2025)

1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate

Tomomasa Watanabe,
Mikihiro Yokozeki,
Masashi Takanohashi,
Michinori Shiomi,
Hiroshi Nakajima,
Masayuki Tanaka,
Daiji Kasahara,
Noriko Kobayashi,
Noriyuki Futagawa

Affiliations

Tomomasa Watanabe: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Mikihiro Yokozeki: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Masashi Takanohashi: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Michinori Shiomi: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Hiroshi Nakajima: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Masayuki Tanaka: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Daiji Kasahara: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Noriko Kobayashi: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan
Noriyuki Futagawa: Compound Semiconductor Development Department , Research Division 3, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa 243-0014, Japan

DOI: https://doi.org/10.35848/1882-0786/adaa4c
Journal volume & issue: Vol. 18, no. 1
p. 016507

Abstract

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A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate. Current injection lasing was achieved at the 1380 nm band under continuous-wave operation with AlGaInAs-based multi-quantum wells and a buried tunnel junction for current and optical confinement. The thermal conductivity of the VCSELs bonded by SAB was superior to that of InP VCSELs owing to high heat dissipation of GaAs DBR. This bonding method is suitable for short-wavelength infrared VCSELs and various other applications, including sensing, data communication, and silicon photonics.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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