Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

F. Liang; Jing Yang; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; P. Chen; S. T. Liu; Y. Xing; L. Q. Zhang; W. J. Wang; Mo Li; Y. T. Zhang; G. T. Du

doi:10.1063/1.5046875

AIP Advances (Aug 2018)

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

F. Liang,
Jing Yang,
D. G. Zhao,
D. S. Jiang,
Z. S. Liu,
J. J. Zhu,
P. Chen,
S. T. Liu,
Y. Xing,
L. Q. Zhang,
W. J. Wang,
Mo Li,
Y. T. Zhang,
G. T. Du

Affiliations

F. Liang: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Jing Yang: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
D. G. Zhao: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
D. S. Jiang: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Z. S. Liu: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
J. J. Zhu: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
P. Chen: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
S. T. Liu: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Y. Xing: State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
L. Q. Zhang: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
W. J. Wang: Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Mo Li: Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Y. T. Zhang: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
G. T. Du: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China

DOI: https://doi.org/10.1063/1.5046875
Journal volume & issue: Vol. 8, no. 8
pp. 085005 – 085005-8

Abstract

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Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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