AIP Advances
(Aug 2018)
Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
F. Liang,
Jing Yang,
D. G. Zhao,
D. S. Jiang,
Z. S. Liu,
J. J. Zhu,
P. Chen,
S. T. Liu,
Y. Xing,
L. Q. Zhang,
W. J. Wang,
Mo Li,
Y. T. Zhang,
G. T. Du
Affiliations
F. Liang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Jing Yang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
D. G. Zhao
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
D. S. Jiang
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Z. S. Liu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
J. J. Zhu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
P. Chen
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
S. T. Liu
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
Y. Xing
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
L. Q. Zhang
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
W. J. Wang
Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Mo Li
Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Y. T. Zhang
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
G. T. Du
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
DOI
https://doi.org/10.1063/1.5046875
Journal volume & issue
Vol. 8,
no. 8
Abstract
Read online
Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.
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