Effects of Black Silicon Surface Morphology Induced by a Femtosecond Laser on Absorptance and Photoelectric Response Efficiency
Xiaomo Zhang,
Weinan Li,
Chuan Jin,
Yi Cao,
Feng Liu,
Na Wei,
Bo Wang,
Rundong Zhou,
Xiangping Zhu,
Wei Zhao
Affiliations
Xiaomo Zhang
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Weinan Li
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Chuan Jin
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Yi Cao
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Feng Liu
Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
Na Wei
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Bo Wang
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Rundong Zhou
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Xiangping Zhu
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
Wei Zhao
State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Industrial Development Zone, Xi’an 710119, China
In this study, the effects of variations in the height (h) and bottom radius (r) of black silicon microstructures on their absorptance and photoelectric response efficiency were analyzed. By using the relation cotθ2=hr to combine the parameters, it was found that changes in morphology affected the absorptance of black silicon microstructures, with h being directly proportional to the absorptance, while r was inversely proportional. A positive correlation was observed between cotθ2 and absorptance. However, the correlation between cotθ2 and photoelectric response efficiency was not significant. Through Raman spectroscopy analysis of the samples, it was concluded that as the laser ablation energy density increased, more lattice defects were introduced, weakening the charge carrier transport efficiency. This study further elucidated the mechanism by which microstructural changes impacted the absorptance and energy density of black silicon, providing valuable insights for optimizing its energy density.
