Nature Communications (Sep 2018)

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

  • Jangyup Son,
  • Junyoung Kwon,
  • SunPhil Kim,
  • Yinchuan Lv,
  • Jaehyung Yu,
  • Jong-Young Lee,
  • Huije Ryu,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Rita Garrido-Menacho,
  • Nadya Mason,
  • Elif Ertekin,
  • Pinshane Y. Huang,
  • Gwan-Hyoung Lee,
  • Arend M. van der Zande

DOI
https://doi.org/10.1038/s41467-018-06524-3
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 9

Abstract

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Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm