Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement
Zenghui Liu,
Xiaobo Zhang,
Zhiwen Liang,
Fengge Wang,
Yanyan Xu,
Xien Yang,
Xin Li,
Yisheng Liang,
Lizhang Lin,
Xiaodong Li,
Wenbo Zhao,
Xin Cao,
Xinqiang Wang,
Baijun Zhang
Affiliations
Zenghui Liu
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xiaobo Zhang
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
Zhiwen Liang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Fengge Wang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Yanyan Xu
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xien Yang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xin Li
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Yisheng Liang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Lizhang Lin
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xiaodong Li
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Wenbo Zhao
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xin Cao
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Xinqiang Wang
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
Baijun Zhang
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside the Schottky diode is discussed in detail under the coupling condition of Joule heat and solid heat transfer. The effects of different substrates and substrate geometric parameters on the thermal characteristics of the Schottky diode chips with single and double-row anode arrangements are systematically analyzed. Compared with that of the chip with single-row anode arrangement, the maximum temperature of the chip with double-row anode arrangement can be reduced by 40 K at the same conditions. For chips with different substrates, chips with diamond substrates can withstand greater power dissipation when reaching the same temperature. The simulation results are instructive for the design and optimization of Schottky diodes in the terahertz field.
