Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

Na Bai; Kan‐Hao Xue; Jinhai Huang; Jun‐Hui Yuan; Wenlin Wang; Ge‐Qi Mao; Lanqing Zou; Shengxin Yang; Hong Lu; Huajun Sun; Xiangshui Miao

doi:10.1002/aelm.202200737

Advanced Electronic Materials (Jan 2023)

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

Na Bai,
Kan‐Hao Xue,
Jinhai Huang,
Jun‐Hui Yuan,
Wenlin Wang,
Ge‐Qi Mao,
Lanqing Zou,
Shengxin Yang,
Hong Lu,
Huajun Sun,
Xiangshui Miao

Affiliations

Na Bai: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Kan‐Hao Xue: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Jinhai Huang: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Jun‐Hui Yuan: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Wenlin Wang: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Ge‐Qi Mao: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Lanqing Zou: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Shengxin Yang: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Hong Lu: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Huajun Sun: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Xiangshui Miao: School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

DOI: https://doi.org/10.1002/aelm.202200737
Journal volume & issue: Vol. 9, no. 1
pp. n/a – n/a

Abstract

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Abstract The wake‐up phenomenon widely exists in hafnia‐based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at a higher temperature has been reported to be effective in eliminating wake‐up, but high temperature may yield the monoclinic phase or generate more oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of Hf0.5Zr0.5O2 (HZO) superlattice ferroelectrics, which involves heating from the Pt/ZrO2 interface side. It is demonstrated that 600 °C annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake‐up free nature and a switchable remnant polarization value of 27.4 µC cm−2. On the other hand, heating from the TiN/HfO2 side, or using 500 °C annealing temperature, could yield ferroelectric devices that require a wake‐up process. The special configuration of Pt/ZrO2 is verified by comparative studies with several other superlattice structures and HZO solid‐state solutions. It is discovered that heating from the Pt/HfO2 side at 600 °C leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia‐based ferroelectric devices.

Published in Advanced Electronic Materials

ISSN: 2199-160X (Online)
Publisher: Wiley-VCH
Country of publisher: Germany
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks; Science: Physics
Website: https://onlinelibrary.wiley.com/journal/2199160x

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