Ultra-small low-threshold mid-infrared plasmonic nanowire lasers based on n-doped GaN

Abstract

Abstract An ultra-small mid-infrared plasmonic nanowire laser based on n-doped GaN metallic material is proposed and studied by the finite-difference time-domain method. In comparison with the noble metals, nGaN is found to possess superior permittivity characteristics in the mid-infrared range, beneficial for generating low-loss surface plasmon polaritons and achieving strong subwavelength optical confinement. The results show that at a wavelength of 4.2 µm, the penetration depth into the dielectric is substantially decreased from 1384 to 163 nm by replacing Au with nGaN, and the cutoff diameter of nGaN-based laser is as small as 265 nm, only 65% that of the Au-based one. To suppress the relatively large propagation loss induced by nGaN, an nGaN/Au-based laser structure is designed, whose threshold gain has been reduced by nearly half. This work may pave the way for the development of miniaturized low-consumption mid-infrared lasers.

Keywords

• Nanowire
• Laser
• Plasmonic
• Mid-infrared
• n-doped GaN