Nanomaterials (Dec 2021)

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

  • Mahdi Asgari,
  • Leonardo Viti,
  • Valentina Zannier,
  • Lucia Sorba,
  • Miriam Serena Vitiello

DOI
https://doi.org/10.3390/nano11123378
Journal volume & issue
Vol. 11, no. 12
p. 3378

Abstract

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Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1–10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz−1/2 with 1 µs response time at 2.8 THz were reached.

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