Nature Communications (Nov 2024)

Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

  • Yu Pan,
  • Tao Jian,
  • Pingfan Gu,
  • Yiwen Song,
  • Qi Wang,
  • Bo Han,
  • Yuqia Ran,
  • Zemin Pan,
  • Yanping Li,
  • Wanjin Xu,
  • Peng Gao,
  • Chendong Zhang,
  • Jun He,
  • Xiaolong Xu,
  • Yu Ye

DOI
https://doi.org/10.1038/s41467-024-54050-2
Journal volume & issue
Vol. 15, no. 1
pp. 1 – 8

Abstract

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Abstract The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.