Revista Elektrón (Dec 2021)

Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

  • Lucas Sambuco Salomone,
  • Mariano Garcia-Inza,
  • Sebastián Carbonetto,
  • Adrián Faigón

DOI
https://doi.org/10.37537/rev.elektron.5.2.136.2021
Journal volume & issue
Vol. 5, no. 2
pp. 100 – 104

Abstract

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The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed.

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