Dynamic Slingshot Operation for Low-Operation- Voltage Nanoelectromechanical (NEM) Memory Switches

Abstract

A dynamic slingshot pull-in operation is presented by using the influence of inertia and damping on the nanoelectromechanical (NEM) memory switch operation. To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved ~0.78 times and ~0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. It is also shown that the proposed dynamic slingshot operation is more effective for lowering operation voltage (VDD) and boosting the chip density of complementary-metal-oxide-semiconductor (CMOS)NEM hybrid reconfigurable logic (RL) circuits than the static slingshot operation.

Keywords

• Complementary-metal-oxide-semiconductor-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits
• VDD)%22%2C%22default_operator%22%3A%22AND%22%7D%7D%7D"> operation voltage (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V</italic>DD)
• dynamic slingshot pull-in