400 GHz electromagnetic radiation sources based on IMPATT diodes

Abstract

The results of research on the creation and development of microwave radiation sources in the long-wave part of the terahertz range (100-400 GHz) using double-drift impact avalanche and transit-time diodes (IMPATT diodes) are presented. Minimum contour losses and maximum output power of low impedance IMPATT diodes are achieved in the oscillatory system on the open radial transmission feeder. Equivalent circuits of generators are considered, and electrophysical parameters of IMPATT structures are given. Schemes of designs of microwave radiation sources and their main parameters are given.