Advances in Condensed Matter Physics (Jan 2013)

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

  • Maria-Alexandra Paun,
  • Jean-Michel Sallese,
  • Maher Kayal

DOI
https://doi.org/10.1155/2013/968647
Journal volume & issue
Vol. 2013

Abstract

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In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.