Nature Communications (Apr 2018)

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

  • Rainer Timm,
  • Ashley R. Head,
  • Sofie Yngman,
  • Johan V. Knutsson,
  • Martin Hjort,
  • Sarah R. McKibbin,
  • Andrea Troian,
  • Olof Persson,
  • Samuli Urpelainen,
  • Jan Knudsen,
  • Joachim Schnadt,
  • Anders Mikkelsen

DOI
https://doi.org/10.1038/s41467-018-03855-z
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 9

Abstract

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Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, with promise for an improved self-cleaning effect.