Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations

Abstract

The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) is used to follow the different bonding configurations of H during the fabrication process. The carrier lifetime degradation upon annealing is correlated to an important loss of Si–H bonds, from both the a­‑Si:H film and the SiOx interfaces. The subsequent hydrogenation step results in the formation of a small number of Si–H bonds near the crystalline silicon c-Si/SiOx interface, associated with the low stretching mode (LSM) and correlated to a significant lifetime improvement. These bonds feature a preferential orientation, as shown by polarized measurements.

Keywords

• Silicon Solar Cells
• Poly-Silicon
• Hydrogen
• TOPCon
• FTIR