Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
Zhiyong Quan,
Meimei Wang,
Xiao Zhang,
Huihui Liu,
Wei Zhang,
Xiaohong Xu
Affiliations
Zhiyong Quan
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
Meimei Wang
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
Xiao Zhang
Research Institute of Materials Science, Shanxi Normal University, Linfen 041004, China
Huihui Liu
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
Wei Zhang
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
Xiaohong Xu
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China
The ferroelectric HfO2 thin film has attracted a lot of research interest due to being Pb free and its excellent compatibility with the Si-based semiconductor process. However, methods to obtain thicker HfO2 thin films with strong ferroelectricity have yet to be explored. In this work, a 50 nm-thick La-doped HfO2 thin film was prepared using pulsed laser deposition, and significant room temperature ferroelectricity with a remnant polarization (Pr) of 27 µC/cm2 was achieved through annealing in N2 with a rapid-heating-temperature process. The ferroelectricity is mainly related to the increase in the content of the (002)-oriented orthogonal phase formed by the rapid-heating-temperature treatment. Furthermore, this special annealing process was verified in a 50 nm-thick Tm-doped HfO2 film, and the Pr of 48 µC/cm2 was observed. This value is the highest value reported so far in doped HfO2 films with a thickness of 50 nm or greater. These results provide a new approach to prepare thicker ferroelectric HfO2-based thin films.
