Spatial Shifts of Reflected Light Beam on Hexagonal Boron Nitride/Alpha-Molybdenum Trioxide Structure
Song Bai,
Yubo Li,
Xiaoyin Cui,
Shufang Fu,
Sheng Zhou,
Xuanzhang Wang,
Qiang Zhang
Affiliations
Song Bai
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
Yubo Li
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
Xiaoyin Cui
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
Shufang Fu
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
Sheng Zhou
Department of Basic Courses, Guangzhou Maritime University, Guangzhou 510725, China
Xuanzhang Wang
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
Qiang Zhang
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
This investigation focuses on the Goos–Hänchen (GH) and Imbert–Fedorov (IF) shifts on the surface of the uniaxial hyperbolic material hexagonal boron nitride (hBN) based on the biaxial hyperbolic material alpha-molybdenum (α-MoO3) trioxide structure, where the anisotropic axis of hBN is rotated by an angle with respect to the incident plane. The surface with the highest degree of anisotropy among the two crystals is selected in order to analyze and calculate the GH- and IF-shifts of the system, and obtain the complex beam-shift spectra. The addition of α-MoO3 substrate significantly amplified the GH shift on the system’s surface, as compared to silica substrate. With the p-polarization light incident, the GH shift can reach 381.76λ0 at about 759.82 cm−1, with the s-polarization light incident, the GH shift can reach 288.84λ0 at about 906.88 cm−1, and with the c-polarization light incident, the IF shift can reach 3.76λ0 at about 751.94 cm−1. The adjustment of the IF shift, both positive and negative, as well as its asymmetric nature, can be achieved by manipulating the left and right circular polarization light and torsion angle. The aforementioned intriguing phenomena offer novel insights for the advancement of sensor technology and optical encoder design.
