Light: Science & Applications (Apr 2022)
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
- Hongliang Chang,
- Zhetong Liu,
- Shenyuan Yang,
- Yaqi Gao,
- Jingyuan Shan,
- Bingyao Liu,
- Jingyu Sun,
- Zhaolong Chen,
- Jianchang Yan,
- Zhiqiang Liu,
- Junxi Wang,
- Peng Gao,
- Jinmin Li,
- Zhongfan Liu,
- Tongbo Wei
Affiliations
- Hongliang Chang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Zhetong Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Shenyuan Yang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
- Yaqi Gao
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Jingyuan Shan
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Bingyao Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Jingyu Sun
- Beijing graphene institute (BGI)
- Zhaolong Chen
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Peng Gao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
- Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41377-022-00756-1
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 12
Abstract
This work successfully achieves a strain-free AlN film with low dislocation density for DUV-LED through graphene-driving strain-pre-store engineering and present the unique mechanism of strain-relaxation in QvdW epitaxy.
