Complex conductivity as a tool to investigate the electrical behavior between graphene oxide and reduced graphene in supercapacitors: Correlation between the electrical properties

Abstract

The storage mechanisms of solid-solid supercapacitors based on graphene oxide (rGO/GO/rGO) were explored by Zhang Q et al. (Zhang et al., 2014) [1], using Density Functional Theory (DFT) and Impedance Spectroscopy (EIS) to elucidate the unusual capacitive behavior of GO sandwich films. Their study revealed alternating charged layers without diffusion zones. Analysis of complex impedance (Z*) data, ranging from 10−3 to 3.106 Hz, was conducted using an equivalent circuit, though this was limited to Nyquist plot data.To further investigate charge storage mechanisms, the current study delved deeper into complex impedance (Z*) and conductivity (σ*). A theoretical approach identified relaxation processes in the imaginary parts of (Z″) and (σ'') across frequencies. Extrapolation up to 3.10^9 Hz and deconvolution confirmed three distinct relaxation processes in Z* and σ*, similar to Cole-Cole relaxation, which describes Maxwell-Wagner-Sillars (MWS) relaxation. This reflects local electrical interactions between active sites on molecular chains and counterions, creating induced dipolar moments or diffusion processes.The identified relaxations at low, medium, and high frequencies correspond well with DFT results, attributed to specific regions: graphene oxide (GO), the (rGO/GO) interface, and reduced graphene (rGO). Key parameters extracted from each relaxation, such as relaxation time, ionic strength, and conductivity values at different frequencies, showed good correlation. This approach, based on deep conductivity (σ*) analysis, effectively highlighted the charge conduction and storage mechanisms in rGO/GO/rGO supercapacitor films.

Keywords

• Graphene oxyde
• Reduced graphene oxyde
• Conductivity
• Relaxation time
• Equivalent circuit