Electronics Letters (Apr 2019)

Design of high‐efficiency CMOS rectifier with low reverse leakage for RF energy harvesting

  • Hyeonwoo Kim,
  • Ickjin Kwon

DOI
https://doi.org/10.1049/el.2018.8143
Journal volume & issue
Vol. 55, no. 8
pp. 446 – 448

Abstract

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A CMOS cross‐coupled RF rectifier that improves power conversion efficiency (PCE) with low reverse leakage current for energy harvesting wireless sensors is proposed. In this Letter, the authors propose a CMOS cross‐coupled differential RF rectifier that uses a thick‐oxide MOSFET as a rectifying device to improve PCE by reducing reverse leakage current. The proposed rectifier is designed for UHF band application using 0.18 µm CMOS technology. Proposed rectifier achieves a peak PCE of 75.2% and sensitivity of − 17 dBm for 1 V output voltage. Peak PCE is improved by 8.8% compared to the conventional rectifier.

Keywords