A Novel Vertical Si TFET With Dual Doping-Less Tunneling Junction: A Simulation Study Including Trap-Related Non-Idealities

Abstract

In this article, we propose a novel vertical TFET that benefits from dual doping-less tunneling junction. Due to the low on-state current of silicon-based TFETs, we employ a dual-source configuration and a high-k dielectric material in the oxide region. The performance assessment of our device is thoroughly investigated using the Silvaco ATLAS device simulator. By activating models such as trap-assisted tunneling and interface trap charge for all the simulations our obtained results are less-ideal but closer to the experimental expectations. We also investigate the impact of Yttrium-doped hafnium, a well-known negative capacitance material, on our device performance. Parameters such as $I_{on}$ of $59.9~\mu \text{A}/\mu \text{m}$ and $I_{on}/I_{off}$ ratio of $2.95\times 10^{8}$ show that our Si-based device is a notable candidate for CMOS applications.

Keywords

• Doping-less
• negative capacitance
• subthreshold swing
• TFET
• trap-assisted tunneling