Optimization of Surface Acoustic Wave Resonators on 42°Y-X LiTaO<sub>3</sub>/SiO<sub>2</sub>/Poly-Si/Si Substrate for Improved Performance and Transverse Mode Suppression
Hongzhi Pan,
Yang Yang,
Lingqi Li,
Qiaozhen Zhang,
Zeyu Zheng,
Xuesong Du,
Pingjing Chen,
Jiahe Dong,
Chuan Lu,
Xiao Xie,
Hualin Li,
Qiang Xiao,
Jinyi Ma,
Zhenglin Chen
Affiliations
Hongzhi Pan
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Yang Yang
College of Information, Mechanical and Electrical Engineering, Shanghai Normal University, Shanghai 200234, China
Lingqi Li
College of Information, Mechanical and Electrical Engineering, Shanghai Normal University, Shanghai 200234, China
Qiaozhen Zhang
College of Information, Mechanical and Electrical Engineering, Shanghai Normal University, Shanghai 200234, China
Zeyu Zheng
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Xuesong Du
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Pingjing Chen
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Jiahe Dong
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Chuan Lu
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Xiao Xie
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Hualin Li
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Qiang Xiao
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Jinyi Ma
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
Zhenglin Chen
China Electronics Technology Group Corporation No.26 Research Institute (SIPAT), Chongqing 400060, China
SAW devices with a multi-layered piezoelectric substrate have excellent performance due to advantages such as a high quality factor, Q, low loss insertion, large bandwidth, etc. Prior to manufacturing, a comprehensive analysis and proper design are essential to evaluating the device’s key performance indicators, including the Bode Q value, bandwidth, and transverse mode suppression. This study explored the performance of SAW resonators employing a 42°Y-X LiTaO3 (LT) thin-plate-based multi-layered piezoelectric substrate. The thicknesses for each layer of the 42°Y-X LT/SiO2/poly-Si/Si substrate were optimized according to the index of phase velocity, Bode Q value, and bandwidth. The effect of the device structure parameters on the dispersion curve and slowness curve was studied, and a flat slowness curve was found to be favorable for transverse mode suppression. In addition, the design of the dummy configuration was also optimized for the suppression of spurious waves. Based on the optimized design, a one-port resonator on the 42°Y-X LT/SiO2/poly-Si/Si substrate was fabricated. The simulation results and measurements are presented and compared, which provides guidelines for the design of new types of SAW devices configured with complex structures.
