Comparative Analysis of Design Parameters for Modern Radio Frequency Complementary Metal Oxide Semiconductor Ultra-Low Power Amplifier Architecture Trends

Abstract

This research presents a comparative analysis of design parameters in modern power amplifier (PA) architecture trends in various CMOS nano-meter technologies. The design parameters include the signal gain, linearity, output power, and output power back-off. The resultant parameters are compared using a table, and various parameters of various designs are visually shown for comparison. These comparative findings will provide any designer with practical information to choose the best CMOS PA design for a specific application. The most important RF CMOS PA integrated implementations are addressed in the conclusion section.

Keywords

• CMOS RF power amplifier
• nano-meter technology trends
• ultra-low power