2.6 μm MBE grown InGaAs detectors with dark current of SRH and TAT
Xiaoli Ji,
Baiqing Liu,
Hengjing Tang,
Xuelin Yang,
Xue Li,
HaiMei Gong,
Bo Shen,
Ping Han,
Feng Yan
Affiliations
Xiaoli Ji
School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
Baiqing Liu
School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
Hengjing Tang
Key Laboratory of Infrared Imaging Material and Detectors, State key laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Shanghai 200083, China
Xuelin Yang
Physics Department, Peking University, Beijing 100871, China
Xue Li
Key Laboratory of Infrared Imaging Material and Detectors, State key laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Shanghai 200083, China
HaiMei Gong
Key Laboratory of Infrared Imaging Material and Detectors, State key laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Shanghai 200083, China
Bo Shen
Physics Department, Peking University, Beijing 100871, China
Ping Han
School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
Feng Yan
School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a deep-level trap located at Ec - 0.25 eV in the absorption layer. Using the trap parameters, a dark current model is constructed and the device simulation generates the dark current characteristic which agrees well with the experimental data. The model suggests that the dark current at low reverse voltage is dominated by the Shockley-Read-Hall (SRH) and trap-assisted tunneling (TAT). Furthermore, it predicts some basic rules for suppressing the dark current in 2.6 μm InGaAs detectors.
