Scientific Reports (Feb 2023)

Room-temperature spin injection from a ferromagnetic semiconductor

  • Shobhit Goel,
  • Nguyen Huynh Duy Khang,
  • Yuki Osada,
  • Le Duc Anh,
  • Pham Nam Hai,
  • Masaaki Tanaka

DOI
https://doi.org/10.1038/s41598-023-29169-9
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 9

Abstract

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Abstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.