Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer
Zongyan Luo,
Shiqiang Lu,
Jinchai Li,
Chuanjia Wang,
Hangyang Chen,
Dayi Liu,
Wei Lin,
Xu Yang,
Junyong Kang
Affiliations
Zongyan Luo
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Shiqiang Lu
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Jinchai Li
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Chuanjia Wang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Hangyang Chen
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Dayi Liu
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Wei Lin
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Xu Yang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
Junyong Kang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Jiujiang Res Inst and Department of Physics, Xiamen University, Xiamen 361005, China
The effects of ultrathin AlN insertion layers on the strain status, as well as optical properties of AlGaN multiple quantum wells (MQWs), were studied. A large stress variation of about -1.46 GPa can be achieved by introducing two ultrathin AlN layers at each interface between the quantum well and the barrier, thereby resulting in the fact that the degree of polarization is increased from 17.8% to 22.3% in traditional MQWs. In addition, the quantum well emission are found to become symmetric and narrower due to the suppression of compositional fluctuation. These results provide a simple technique to modify the strain field of MQWs so as to improve transverse-electric polarized emission for deep ultraviolet light emitting diodes.
