Nature Communications (Mar 2022)
Antiferroelectric negative capacitance from a structural phase transition in zirconia
- Michael Hoffmann,
- Zheng Wang,
- Nujhat Tasneem,
- Ahmad Zubair,
- Prasanna Venkatesan Ravindran,
- Mengkun Tian,
- Anthony Arthur Gaskell,
- Dina Triyoso,
- Steven Consiglio,
- Kandabara Tapily,
- Robert Clark,
- Jae Hur,
- Sai Surya Kiran Pentapati,
- Sung Kyu Lim,
- Milan Dopita,
- Shimeng Yu,
- Winston Chern,
- Josh Kacher,
- Sebastian E. Reyes-Lillo,
- Dimitri Antoniadis,
- Jayakanth Ravichandran,
- Stefan Slesazeck,
- Thomas Mikolajick,
- Asif Islam Khan
Affiliations
- Michael Hoffmann
- NaMLab gGmbH
- Zheng Wang
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Nujhat Tasneem
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Ahmad Zubair
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
- Prasanna Venkatesan Ravindran
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Mengkun Tian
- Institute for Electronics and Nanotechnology, Georgia Institute of Technology
- Anthony Arthur Gaskell
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Dina Triyoso
- TEL Technology Center, America, LLC
- Steven Consiglio
- TEL Technology Center, America, LLC
- Kandabara Tapily
- TEL Technology Center, America, LLC
- Robert Clark
- TEL Technology Center, America, LLC
- Jae Hur
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Sai Surya Kiran Pentapati
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Sung Kyu Lim
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Milan Dopita
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University
- Shimeng Yu
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- Winston Chern
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
- Josh Kacher
- School of Materials Science and Engineering, Georgia Institute of Technology
- Sebastian E. Reyes-Lillo
- Departamento de Ciencias Físicas, Universidad Andres Bello
- Dimitri Antoniadis
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
- Jayakanth Ravichandran
- Department of Chemical Engineering and Materials Science, University of Southern California
- Stefan Slesazeck
- NaMLab gGmbH
- Thomas Mikolajick
- NaMLab gGmbH
- Asif Islam Khan
- School of Electrical and Computer Engineering, Georgia Institute of Technology
- DOI
- https://doi.org/10.1038/s41467-022-28860-1
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 8
Abstract
Applying an electric field to an antiferroelectric material transforms its non-polar crystal structure into a polar one. Here, the authors show that the antiferroelectric transition in zirconia causes a negative capacitance, useful for electronics.
