Recovery of electroluminescence in electron-only organic light-emitting diode by inserting a thin MoO3 layer at Bphen/NPB interface
A. R. Yu,
Y. J. Tang,
Q. Zeng,
S. B. Liu,
X. Y. Hou,
G. Y. Zhong
Affiliations
A. R. Yu
Department of Materials Science, Fudan University, Shanghai 200433, China
Y. J. Tang
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Q. Zeng
School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China
S. B. Liu
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
X. Y. Hou
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
G. Y. Zhong
Department of Materials Science, Fudan University, Shanghai 200433, China
An electron-only device was realized by using 20 nm Bphen layer to modify ITO anode in NPB/AlQ3 heterojunction organic light-emitting diode (OLED). Different from the usual application as an anode buffer layer, up to 10 nm thick MoO3 layer was inserted at Bphen/NPB interface to recover the electroluminescence (EL). Interfacial charge generation and transport are suggested as the mechanism of such luminescence recovery. Experimental results showed that mobile holes generated in NPB transported to NPB/AlQ3 interface, resulting in light-emitting, while electrons in MoO3 transported to ITO anode through Bphen layer under continuous current condition. The suggested mechanism explains how inserted MoO3 layer modifies Bphen/NPB interface.
