Cross‐layer all‐interface defect passivation with pre‐buried additive toward efficient all‐inorganic perovskite solar cells
Qiurui Wang,
Jingwei Zhu,
Yuanyuan Zhao,
Yijie Chang,
Nini Hao,
Zhe Xin,
Qiang Zhang,
Cong Chen,
Hao Huang,
Qunwei Tang
Affiliations
Qiurui Wang
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Jingwei Zhu
College of Materials Science and Engineering Sichuan University Chengdu China
Yuanyuan Zhao
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Yijie Chang
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Nini Hao
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Zhe Xin
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Qiang Zhang
College of Mechanical and Electronic Engineering Shandong University of Science and Technology Qingdao China
Cong Chen
College of Materials Science and Engineering Sichuan University Chengdu China
Hao Huang
Guangxi Key Laboratory of Processing for Non‐Ferrous Metals and Featured Materials, School of Resources, Environment and Materials Guangxi University Nanning China
Qunwei Tang
Institute of Carbon Neutrality, College of Chemical and Biological Engineering Shandong University of Science and Technology Qingdao China
Abstract The buried interface in the perovskite solar cell (PSC) has been regarded as a breakthrough to boost the power conversion efficiency and stability. However, a comprehensive manipulation of the buried interface in terms of the transport layer, buried interlayer, and perovskite layer has been largely overlooked. Herein, we propose the use of a volatile heterocyclic compound called 2‐thiopheneacetic acid (TPA) as a pre‐buried additive in the buried interface to achieve cross‐layer all‐interface defect passivation through an in situ bottom‐up infiltration diffusion strategy. TPA not only suppresses the serious interfacial nonradiative recombination losses by precisely healing the interfacial and underlying defects but also effectively enhances the quality of perovskite film and releases the residual strain of perovskite film. Owing to this versatility, TPA‐tailored CsPbBr3 PSCs deliver a record efficiency of 11.23% with enhanced long‐term stability. This breakthrough in manipulating the buried interface using TPA opens new avenues for further improving the performance and reliability of PSC.
