Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
Jungang Heo,
Youngboo Cho,
Hyeonseung Ji,
Min-Hwi Kim,
Jong-Ho Lee,
Jung-Kyu Lee,
Sungjun Kim
Affiliations
Jungang Heo
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
Youngboo Cho
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
Hyeonseung Ji
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
Min-Hwi Kim
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
Jong-Ho Lee
Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
Jung-Kyu Lee
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
Sungjun Kim
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of the ZrOX-based device enables power consumption reduction owing to a lower forming voltage and compliance current. Moreover, the on/off ratio of the Ti/ZrOX/HfAlOX/TiN device (>102) is higher than that of the Ti/ZrOX/TiN device (>10). We use the 1/f noise measurement technique to clarify the transport mechanism of the Ti/ZrOX/HfAlOX/TiN device; consequently, ohmic conduction and Schottky emission are confirmed in the low- and high-resistance states, respectively. In addition, the multilevel cell, potentiation, and depression characteristics of the Ti/ZrOX/HfOX/TiN device are considered to assess its suitability as a neuromorphic device. Accordingly, a modified National Institute of Standards and Technology database simulation is conducted using Python to test the pattern recognition accuracy.
