We present a simple equivalent circuit model for the transfer function of an optomechanical MEMS transducer capable of distortion-free electric field strength measurements. This model allows not only to qualitatively understand the characteristics of the transducer but also takes into account parasitic effects and material properties. Such parasitic effects have been observed while evaluating the first results of electric field measurements performed with the sensor. The model helped to identify and diminish these parasitic effects.
