We propose a BaCeO3/BaZrO3 double-layer buffer template, grown on a SrTiO3 substrate, for epitaxial growth of a target oxide film with large lattice constants of over 4.1 Å. Lattice mismatch from the substrate was mostly accommodated for by a BaZrO3 arbitrating layer. Having an ideal in-plane lattice structure, BaCeO3 served as the main-buffer to grow the target material. We demonstrated commensurate epitaxy of BaBiO3 (BBO, a = 4.371 Å) utilizing the new buffer template. Our results can be applied to heteroepitaxy and strain engineering of novel oxide materials of sizable lattice constants.
