To the Theory of Intraband Single-Photon Absorption of Light in Semiconductors with Zinc-Blende Structure

Abstract

A theoretical analysis of the frequency-temperature dependence of the coefficient of single-photon absorption of polarized radiation in narrow- and wide-bandgap semiconductors has been conducted, considering intraband optical transitions and the temperature dependence of band parameters. It has been shown that with a fixed frequency, the single-photon absorption coefficient initially increases with temperature, reaches a maximum, and then decreases. The maximum value shifts towards lower frequencies for both narrow- and wide-bandgap semiconductors when considering the temperature dependence of the bandgap width and the effective mass of holes. It was determined that in semiconductors with a zinc-blende lattice structure, the consideration of the temperature dependence of the band parameters leads to a decrease in the amplitude value of the frequency and temperature dependence of the single-photon absorption coefficient. As the temperature increases, the absorption threshold decreases, which is noticeably observed when taking into account the Passler formula. Each type of optical transition contributes differently to the frequency, temperature, and polarization dependencies of K(1)SO,lh(ω,T).

Keywords

• Temperature dependence of band parameters
• Bandgap width
• Effective mass of holes
• Passler and Varshni formula
• Narrow- and wide-bandgap semiconductor
• Single-photon absorption coefficient