SCAPS 3201 simulation of tunable heterostructured p-CdTe and n-CdS thin films-based solar cells

Abstract

This paper presents a numerical simulation using SCAPS 3201 and an electrometer for the investigation of electrical behavior at the interface of heterostructured Cadmium telluride and cadmium sulfide thin films. The paper also explicitly compares the theoretical and experimental results of the synthesized materials via the electrodeposition route. Parameters such as electrical conductivity types and energy band gaps used in the simulation were obtained from the various analytical procedure employed in contrast to the conventional mode of application of the SCAPS simulation. In most research works on CdTe/CdS-based solar cells, the conductivity type, p-type, and n-type used in the SCAPS simulation were based on assumption. However, in this study, photoelectrochemical (PEC) cell measurement of the material's conductivity type helped in the identification of p-type CdTe and n-type CdS. The material's properties were examined using an X-ray Diffractometer (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectrophotometer (UV-VIS), (PEC), and electrometer. The energy band gaps at varied cathodic potentials and the grain size of the CdTe thin films were estimated as 1.47–1.89 eV and 56 nm while that of the CdS was estimated at 2.37–2.46 eV and 115 nm. The results indicate a noticeable drastic improvement in the performance of electrodeposited p-CdTe and n-CdS thin film-based solar cells, which aid the tuning of the growth potential. The extracted electrical parameters (JSC = 15.22, Voc = 749, FF = 0.82 and QE = 9.0% at 520 nm) using SCAPS and electrometer are evidence of the improvement made and the results from both the SCAPS and electrometer are in tandem.

Keywords

• CdTe/CdS thin Films
• Electrodeposition technique
• Heterostructured based photovoltaic
• Electrical conductivity type
• SCAPS