A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
Fayssal Mekaret,
Abdelaziz Rabehi,
Baya Zebentout,
Shahrazade Tizi,
Abdelmalek Douara,
Stefano Bellucci,
Mawloud Guermoui,
Zineb Benamara,
El-Sayed M. El-kenawy,
Marwa M. Eid,
Amel Ali Alhussan
Affiliations
Fayssal Mekaret
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
Abdelaziz Rabehi
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
Baya Zebentout
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
Shahrazade Tizi
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
Abdelmalek Douara
Faculty of Science and Technology, Tissemsilt University, 38000 Tissemsilt, Algeria
Stefano Bellucci
INFN-Laboratori Nazionali di Frascati, Via E. Fermi 54, 00044 Frascati, Italy
Mawloud Guermoui
Telecommunications and Smart Systems Laboratory, University of Djelfa, P.O. Box 3117, Djelfa 17000, Algeria
Zineb Benamara
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
El-Sayed M. El-kenawy
School of ICT, Faculty of Engineering, Design and Information & Communications Technology (EDICT), Bahrain Polytechnic, P.O. Box 33349, Isa Town, Bahrain
Marwa M. Eid
Faculty of Artificial Intelligence, Delta University for Science and Technology, Mansoura, Egypt
Amel Ali Alhussan
Department of Computer Sciences, College of Computer and Information Sciences, Princess Nourah Bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
This study undertakes a comparative analysis of Schottky diodes using three prominent SiC polytypes (3C, 4H, and 6H). The comparison involves meticulous calculations of the Schottky barrier resulting from the metal/SiC interface for each polytype assessed in both practical and theoretical scenarios. Specifically, the barrier height (ΦB) is systematically plotted against the metal work function (ΦM) across a range of metal work functions from 3.65 to 5.65 eV. Furthermore, the investigation extends to the saturation currents of three distinct charge transport models for each SiC polytype: thermionic current (TE), thermionic field emission, and field emission. Initial analyses plot saturation currents as a function of concentration within a temperature range of 100–500 K. Subsequent examinations plot saturation currents as a function of temperature across a concentration gradient from 1014 to 1020 cm−3. The comparison between the activation energy and thermal energy at standard room temperature (T = 300 K) yielded results consistent with theoretical predictions, affirming the robustness and applicability of each model within its dominant range.
