Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

Abstract

Power converters utilising SiC MOSFETs have attracted significant interest from the automotive industry, renewable energy applications, data centres, and power supplies due to their improved efficiency and power density, reliability, and ability to deliver compact design solutions. This paper proposes a SiC hybrid-channel trench MOSFET to reduce the conduction losses compared to state-of-the-art designs. With the help of the additional lateral channel, formed under the gate trench, the specific on-state resistance (RON, SP) is decreased by over 40 % for a 650 V-rated device. TCAD simulations reveal that the device's blocking capability and short circuit robustness have been maintained and the device capacitance is also analyzed.

Keywords

• Silicon carbide
• MOSFET
• Hybrid
• Trench
• Model
• On-resistance