APL Materials
(Jan 2020)
Voltage-controlled magnetic anisotropy in an ultrathin Ir-doped Fe layer with
a CoFe termination layer
Takayuki Nozaki,
Masaki Endo,
Masahito Tsujikawa,
Tatsuya Yamamoto,
Tomohiro Nozaki,
Makoto Konoto,
Hiroyuki Ohmori,
Yutaka Higo,
Hitoshi Kubota,
Akio Fukushima,
Masanori Hosomi,
Masafumi Shirai,
Yoshishige Suzuki,
Shinji Yuasa
Affiliations
Takayuki Nozaki
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Masaki Endo
Sony Semiconductor Solutions
Corporation, Atsugi, Kanagawa 243-0021, Japan
Masahito Tsujikawa
Research Institute of Electrical Communication,
Tohoku University, Sendai, Miyagi 980-8577, Japan
Tatsuya Yamamoto
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Tomohiro Nozaki
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Makoto Konoto
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Hiroyuki Ohmori
Sony Semiconductor Solutions
Corporation, Atsugi, Kanagawa 243-0021, Japan
Yutaka Higo
Sony Semiconductor Solutions
Corporation, Atsugi, Kanagawa 243-0021, Japan
Hitoshi Kubota
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Akio Fukushima
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Masanori Hosomi
Sony Semiconductor Solutions
Corporation, Atsugi, Kanagawa 243-0021, Japan
Masafumi Shirai
Research Institute of Electrical Communication,
Tohoku University, Sendai, Miyagi 980-8577, Japan
Yoshishige Suzuki
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
Shinji Yuasa
National Institute of Advanced Industrial Science
and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki
305-8568, Japan
DOI
https://doi.org/10.1063/1.5132626
Journal volume & issue
Vol. 8,
no. 1
pp.
011108
– 011108-6
Abstract
Read online
We investigated the voltage-controlled magnetic anisotropy (VCMA) in an ultrathin Ir-doped Fe layer with a CoxFe1−x termination layer. The VCMA effect depends on the concentration of the CoxFe1−x alloy, and a large VCMA coefficient, as high as −350 fJ/Vm, was obtained with a Co-rich termination layer. First principles calculations revealed that the increased VCMA effect is due not only to the added Co atoms but also to the Fe and Ir atoms adjacent to the Co atoms. Interface engineering using CoFe termination is also effective for recovering the tunneling magnetoresistance while maintaining a high VCMA effect. The developed structure is applicable for voltage-controlled magnetoresistive devices.
Published in APL Materials
ISSN
2166-532X (Online)
Publisher
AIP Publishing LLC
Country of publisher
United States
LCC subjects
Technology: Chemical technology: Biotechnology
Science: Physics
Website
http://aplmaterials.aip.org
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