Nanomaterials (Jan 2024)

Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)<sub>4</sub>As<sub>3</sub> Single Crystals

  • Yi Peng,
  • Luchuan Shi,
  • Guoqiang Zhao,
  • Jun Zhang,
  • Jianfa Zhao,
  • Xiancheng Wang,
  • Zheng Deng,
  • Changqing Jin

DOI
https://doi.org/10.3390/nano14030263
Journal volume & issue
Vol. 14, no. 3
p. 263

Abstract

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Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1−x−yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1−x−yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of −93% at 7 T).

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