Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

Cheng-Da Tsai; Ikai Lo; Ying-Chieh Wang; Chen-Chi Yang; Shuo-Ting You; Hong-Yi Yang; Hui-Chun Huang; Mitch M. C. Chou

doi:10.1063/1.5041883

AIP Advances (Sep 2018)

Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

Cheng-Da Tsai,
Ikai Lo,
Ying-Chieh Wang,
Chen-Chi Yang,
Shuo-Ting You,
Hong-Yi Yang,
Hui-Chun Huang,
Mitch M. C. Chou

Affiliations

Cheng-Da Tsai: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Ikai Lo: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Ying-Chieh Wang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Chen-Chi Yang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Shuo-Ting You: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Hong-Yi Yang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Hui-Chun Huang: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.
Mitch M. C. Chou: Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R.O.C.

DOI: https://doi.org/10.1063/1.5041883
Journal volume & issue: Vol. 8, no. 9
pp. 095208 – 095208-8

Abstract

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We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved. The mechanism of the termination of awl-shaped growth and the growth rates of GaN-barrier and InxGa1-xN-well were evaluated and confirmed with the triple quantum wells. Based on the growth rates and 28o-angle geometric shape, one can control the finite size of InGaN/GaN microdisks by plasma-assisted molecular beam epitaxy.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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