A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A

Abstract

Abstract A dual P‐layer 4H‐SiC p‐i‐n ultraviolet photodetector is proposed and studied. The modeling results of the photoelectric characteristics demonstrate the dual P‐layer structure could effectively reduce the recombination of the photogenerated carriers and separate more electron‐hole pairs near the surface of the device. And, the photodetector exhibits a significantly high response and detectivity, especially in the wavelength range of extreme ultraviolet to ultraviolet‐C. A high spectral response peak of 0.2 A/W corresponding to a quantum efficiency of 95.3% is achieved. Furthermore, an avalanche breakdown voltage as low as 182 V is observed. The dual P‐layer structure significantly presents an innovative approach for the advancement of future ultraviolet photodetectors applied in the detection at illumination wavelengths ranging from extreme ultraviolet to ultraviolet‐A.

Keywords

• p‐i‐n photodiodes
• ultraviolet detectors