Resonance Raman Scattering in TlGaSe2 Crystals

N. N. Syrbu; A. V. Tiron; V. V. Zalamai; N. P. Bejan

doi:10.1155/2017/5787821

Advances in Condensed Matter Physics (Jan 2017)

Resonance Raman Scattering in TlGaSe2 Crystals

N. N. Syrbu,
A. V. Tiron,
V. V. Zalamai,
N. P. Bejan

Affiliations

N. N. Syrbu: Department of Telecommunication, Technical University of Moldova, Chișinău, Moldova
A. V. Tiron: Department of Telecommunication, Technical University of Moldova, Chișinău, Moldova
V. V. Zalamai: Laboratory of Materials for Photovoltaics and Photonics, Institute of Applied Physics, Academy of Sciences of Moldova, Chișinău, Moldova
N. P. Bejan: Department of Telecommunication, Technical University of Moldova, Chișinău, Moldova

DOI: https://doi.org/10.1155/2017/5787821
Journal volume & issue: Vol. 2017

Abstract

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The resonance Raman scattering for geometries Y(YX)Z and Y(ZX)Z at temperature 10 K and infrared reflection spectra in E∥a and E∥b polarizations at 300 K were investigated. The number of Aa (Ba) and Au (Bu) symmetry vibrational modes observed experimentally and calculated theoretically agree better in this case than when TlGa2Se4 crystals belong to D2h symmetry group. The emission of resonance Raman scattering and excitonic levels luminescence spectra overlap. The lines in resonance Raman spectra were identified as a combination of optical phonons in Brillouin zone center.

Published in Advances in Condensed Matter Physics

ISSN: 1687-8108 (Print); 1687-8124 (Online)
Publisher: Hindawi Limited
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://onlinelibrary.wiley.com/journal/4042

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