Frontiers in Physics (Aug 2022)

Monolithic arrays of silicon sensors

  • Ian Harding,
  • Wei Chen,
  • Gabriele Giacomini,
  • Anthony Kuczewski,
  • Abdul K. Rumaiz,
  • David Peter Siddons

DOI
https://doi.org/10.3389/fphy.2022.927776
Journal volume & issue
Vol. 10

Abstract

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Monolithic arrays of silicon p-n junctions are commonly used to deliver spatial information on impinging radiation, with the advantages of low-noise and fast signal generation. Additionally, array geometries also allow for a segmentation of a large area into individual channels that can be read out in parallel, so that a high-event rate can be managed. To optimize the noise performance, however, some key points must be addressed to control the silicon/silicon oxide interface. Replacing the p-n junctions with silicon drift sensors avoids noise related to the interface states, at the expense of a more complicated process and slower signals. In this paper, some of the aspects needing consideration when engineering a monolithic array of silicon sensors are reviewed.

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