Transport evidence of mass-less Dirac fermions in (Cd1−x−yZnxMny)3As2 (x + y = 0.4)

Abstract

Charge carriers parameters on a 2D-layer surface for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) (the concentration ${n}_{2D}$ = 1.9 × 10 ^12 cm ^–2 , the effective value of the 2D-layer ${d}_{2D}={n}_{2D}/{n}_{3D}$ = 14.5 nm, the wave vector ${k}_{F}$ = 0.1 nm ^–1 , the charge carriers relaxation time due to dispersion ${\tau }_{D}$ = 1.8 × 10 ^–13 s, the velocity of charge carriers on Fermi surface ${v}_{F}=\hslash {k}_{F}/{m}_{c}$ = 2.6 ^5 × 10 ^5 m s ^−1 , the mean free path ${l}_{F}={v}_{F}{\tau }_{D}$ = 47.7 nm) were determined. It was found that the dependence of the cyclotron m ass m _с (0)/m _0 on Fermi wave vector k _F for (Cd _1−x−y Zn _x Mn _y ) _3 As _2 ( y = 0.08) is in compliance with a theoretical linear dependence, that describes mass-less Dirac fermions.

Keywords

• Shubnikov–de Haas effect
• mass-less Dirac fermions
• 3D topological Dirac semimetals
• diluted magnetic semiconductor