Band Gap Engineering in Ultimately Thin Slabs of CdTe with Different Layer Stackings

Abstract

Ultrathin solid slabs often have properties different from those of the bulk phase. This effect can be observed both in traditional three-dimensional materials and in van der Waals (vdW) solids in the few monolayer limit. In the present work, the band gap variation of the CdTe slabs, induced by their thickness, was studied by the density functional theory (DFT) method for the sphalerite (zinc-blende) phase and for the recently proposed inverted phase. The sphalerite phase has the Te–Cd–Te–Cd atomic plane sequence, while in the inverted phase Cd atoms are sandwiched by Te planes forming vdW blocks with the sequence Te–Cd–Cd–Te. Based on these building blocks, a bulk vdW CdTe crystal was built, whose thermodynamical stability was verified by DFT calculations. Band structures and partial densities of states for sphalerite and inverted phases were calculated. It was demonstrated for both phases that using slabs with a thickness of one to several monolayers for sphalerite phase (vdW blocks for inverted phase), structures with band gaps varying in a wide range can be obtained. The presented results allow us to argue that ultrathin CdTe can be a promising electronic material.

Keywords

• 2D chalcogenides
• CdTe
• electronic structure
• band gap thickness dependence
• DFT