Enhanced field emission properties From plasma treated Ti3C2Tx (MXene) emitters

X D Hong; H R Zheng; D Liang

doi:10.1088/2053-1591/abc9e0

Materials Research Express (Jan 2020)

Enhanced field emission properties From plasma treated Ti3C2Tx (MXene) emitters

X D Hong,
H R Zheng,
D Liang

Affiliations

X D Hong: ORCiD; Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Institute of Biomedical and Health Engineering, Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen, People’s Republic of China , 518055; Key Laboratory for Magnetic Resonance and Multimodality Imaging of Guangdong Province, Shenzhen, People’s Republic of China
H R Zheng: Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Institute of Biomedical and Health Engineering, Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen, People’s Republic of China , 518055; Key Laboratory for Magnetic Resonance and Multimodality Imaging of Guangdong Province, Shenzhen, People’s Republic of China
D Liang: ORCiD; Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Institute of Biomedical and Health Engineering, Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen, People’s Republic of China , 518055; Key Laboratory for Magnetic Resonance and Multimodality Imaging of Guangdong Province, Shenzhen, People’s Republic of China

DOI: https://doi.org/10.1088/2053-1591/abc9e0
Journal volume & issue: Vol. 7, no. 11
p. 115011

Abstract

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MXenes are an emerging family of 2D transition metal carbides and nitrides and have already shown potential in various applications. However, up to now, studies on the field emission application of MXenes are scarce. In this study, the field emitters based on the Ti _3 C _2 T _x (MXene) flakes were prepared by facile solution process and the effect of different plasmas (H _2 , Ar, O _2 ) on the field emission properties of Ti _3 C _2 T _x films was investigated. The plasma treated Ti _3 C _2 T _x films showed significantly better field emission properties than that of as-deposited Ti _3 C _2 T _x films. Compared to the Ar and O _2 plasma treated Ti _3 C _2 T _x films, the H _2 plasma treated Ti _3 C _2 T _x films displayed lower turn-on field (8.5 V/ μ m) and larger maximum current density (1222 μ A cm ^−2 ). The H _2 plasma treated Ti _3 C _2 T _x films also showed good emission stability. These results suggested the potential of the H _2 plasma treated Ti _3 C _2 T _x films as electron source of vacuum electronic devices.

Published in Materials Research Express

ISSN: 2053-1591 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology
Website: https://iopscience.iop.org/journal/2053-1591

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