High-speed 850 nm oxide-confined vertical-cavity surface-emitting lasers at high temperature and cryogenic temperature

Abstract

High-speed 850 nm oxide-confined vertical-cavity surface-emitting lasers (VCSELs) are key laser sources for short-reach optical interconnects in high-performance computing systems and future cryogenic computing systems. In this paper, we present high-speed 850 nm oxide-confined VCSELs operating at room temperature (RT), 85 °C (358 K), and 3.6 K. At RT, the VCSEL can realize a modulation bandwidth f _− _3dB of 31.7 GHz and 52 Gbps non-return-to-zero (NRZ) data rate. At 85 °C, the VCSEL can achieve a modulation bandwidth f _− _3dB of 26.5 GHz and 50 Gbps NRZ data rate without equalization and pre-emphasis. The cryogenic 850 nm oxide-confined VCSEL with a modulation bandwidth of 20.4 GHz at 3.6 K is demonstrated. Without pre-emphasis and equalization, the cryogenic VCSEL achieves a 32 Gbps NRZ data rate with a bit error rate of 2.1 × 10 ^−12 at 3.6 K.

Keywords

• vertical-cavity surface-emitting laser
• optical interconnects
• modulation bandwidth
• data rate
• high temperature
• cryogenic temperature