Raman peak shifts by applied magnetic field in InSb/Al x In1−x Sb superlattices

Matasit Chikumpa; Zon; Supachok Thainoi; Suwit Kiravittaya; Aniwat Tandaechanurat; Noppadon Nuntawong; Suwat Sopitpan; Visittapong Yordsri; Chanchana Thanachayanont; Songphol Kanjanachuchai; Somchai Ratanathammaphan; Somsak Panyakeow

doi:10.1088/2053-1591/abbded

Materials Research Express (Jan 2020)

Raman peak shifts by applied magnetic field in InSb/Al x In1−x Sb superlattices

Matasit Chikumpa,
Zon,
Supachok Thainoi,
Suwit Kiravittaya,
Aniwat Tandaechanurat,
Noppadon Nuntawong,
Suwat Sopitpan,
Visittapong Yordsri,
Chanchana Thanachayanont,
Songphol Kanjanachuchai,
Somchai Ratanathammaphan,
Somsak Panyakeow

Affiliations

Matasit Chikumpa: Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand
Zon: ORCiD; Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand
Supachok Thainoi: Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand
Suwit Kiravittaya: ORCiD; Advanced Optical Technology Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University , Phitsanulok, Thailand
Aniwat Tandaechanurat: International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn Universit y, Bangkok, Thailand
Noppadon Nuntawong: National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand
Suwat Sopitpan: National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand
Visittapong Yordsri: National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand
Chanchana Thanachayanont: National Science and Technology Development Agency (NSTDA), Pathumthani 12120, Thailand
Songphol Kanjanachuchai: ORCiD; Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand
Somchai Ratanathammaphan: Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand
Somsak Panyakeow: ORCiD; Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University , Bangkok, Thailand

DOI: https://doi.org/10.1088/2053-1591/abbded
Journal volume & issue: Vol. 7, no. 10
p. 105007

Abstract

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InSb/Al _x ln _1− _x Sb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samples are characterized by atomic force microscopy (AFM), X-ray diffraction and Raman scattering spectroscopy. The Raman spectroscopy is done by using excitation laser with 633 nm wavelength and 2 μ m beam spot under applied magnetic field from 0 to 170 mT. Both TO and LO Raman peaks from InSb are detected from all samples. There are Raman peak shift of both TO and LO by applied magnetic field. Stronger magnetic effect is found in LO than TO phonon modes. We attribute this effect to the symmetry breaking of the InSb/AlInSb interfaces since the observed roughness of the top InSb layer can qualitatively correlate with the shift.

Published in Materials Research Express

ISSN: 2053-1591 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials; Technology: Chemical technology
Website: https://iopscience.iop.org/journal/2053-1591

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